Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer.
نویسندگان
چکیده
Low-temperature electroluminescence from ZnO nanowire light-emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p-GaN, high-purity UV light emission at wavelength 398 nm was obtained. As the temperature is decreased, contrary to the typical GaN-based light emitting diodes, our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen MgO defects.
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ورودعنوان ژورنال:
- Optics letters
دوره 35 24 شماره
صفحات -
تاریخ انتشار 2010